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Author Details

Khrykin, O. I.

Issue Section Title File
Vol 50, No 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Vol 50, No 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Vol 51, No 8 (2017) Erratum Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
Vol 51, No 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon
Vol 52, No 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire