Author Details
Aleksandrov, O. V.
| Issue | Section | Title | File |
| Vol 50, No 6 (2016) | Amorphous, Vitreous, and Organic Semiconductors | Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen | |
| Vol 51, No 8 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Influence of traps in silicon dioxide on the breakdown of MOS structures | |
| Vol 52, No 6 (2018) | Physics of Semiconductor Devices | Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate | |
| Vol 52, No 13 (2018) | Physics of Semiconductor Devices | Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection | |
| Vol 53, No 2 (2019) | Electronic Properties of Semiconductors | Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |