Informaçao sobre o Autor
Aleksandrov, O. V.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 6 (2016) | Amorphous, Vitreous, and Organic Semiconductors | Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen | |
Volume 51, Nº 8 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Influence of traps in silicon dioxide on the breakdown of MOS structures | |
Volume 52, Nº 6 (2018) | Physics of Semiconductor Devices | Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate | |
Volume 52, Nº 13 (2018) | Physics of Semiconductor Devices | Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection | |
Volume 53, Nº 2 (2019) | Electronic Properties of Semiconductors | Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |