Author Details
Cherkashin, N.
Issue | Section | Title | File |
Vol 50, No 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
Vol 50, No 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs | |
Vol 53, No 12 (2019) | Physics of Semiconductor Devices | InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |