Informaçao sobre o Autor
Cherkashin, N.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
Volume 50, Nº 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs | |
Volume 53, Nº 12 (2019) | Physics of Semiconductor Devices | InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |