Author Details

Yagovkina, M. A.

Issue	Section	Title	File
Vol 50, No 9 (2016)	Fabrication, Treatment, and Testing of Materials and Structures	Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
Vol 50, No 10 (2016)	Physics of Semiconductor Devices	effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
Vol 52, No 1 (2018)	Fabrication, Treatment, and Testing of Materials and Structures	Investigation of the Modified Structure of a Quantum Cascade Laser
Vol 52, No 4 (2018)	XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties	Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State
Vol 52, No 9 (2018)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Template Synthesis of Monodisperse Spherical Nanocomposite SiO₂/GaN:Eu³⁺ Particles
Vol 52, No 14 (2018)	Nanostructure Devices	Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
Vol 53, No 6 (2019)	Physics of Semiconductor Devices	Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers
Vol 53, No 8 (2019)	Fabrication, Treatment, and Testing of Materials and Structures	Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties