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Автор туралы ақпарат

Shaleev, M. V.

Шығарылым Бөлім Атауы Файл
Том 50, № 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
Том 50, № 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Том 50, № 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
Том 50, № 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
Том 50, № 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
Том 51, № 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
Том 51, № 12 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Том 52, № 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates