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Informaçao sobre o Autor

Shaleev, M. V.

Edição Seção Título Arquivo
Volume 50, Nº 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
Volume 50, Nº 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Volume 50, Nº 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
Volume 50, Nº 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
Volume 50, Nº 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
Volume 51, Nº 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
Volume 51, Nº 12 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Volume 52, Nº 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates