Author Details

Zhuravlev, K. S.

Issue	Section	Title	File
Vol 50, No 2 (2016)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
Vol 50, No 8 (2016)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects
Vol 51, No 3 (2017)	Physics of Semiconductor Devices	AlN/GaN heterostructures for normally-off transistors
Vol 51, No 5 (2017)	Spectroscopy, Interaction with Radiation	Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method
Vol 52, No 1 (2018)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths
Vol 52, No 2 (2018)	Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors	Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al_xGa_{1 – x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
Vol 52, No 6 (2018)	Fabrication, Treatment, and Testing of Materials and Structures	Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
Vol 52, No 12 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	Formation of a Graphene-Like SiN Layer on the Surface Si(111)
Vol 53, No 11 (2019)	Fabrication, Treatment, and Testing of Materials and Structures	On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

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