Author Details
Samartsev, I.
| Issue | Section | Title | File |
| Vol 51, No 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate | |
| Vol 52, No 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates | |
| Vol 53, No 12 (2019) | Physics of Semiconductor Devices | GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |