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作者的详细信息

Zavarin, E. E.

期 栏目 标题 文件
卷 50, 编号 2 (2016) Physics of Semiconductor Devices Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
卷 50, 编号 8 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Elastic strains and delocalized optical phonons in AlN/GaN superlattices
卷 50, 编号 9 (2016) Fabrication, Treatment, and Testing of Materials and Structures Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
卷 50, 编号 10 (2016) Physics of Semiconductor Devices effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
卷 50, 编号 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
卷 50, 编号 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
卷 52, 编号 14 (2018) Nanostructure Devices Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
卷 53, 编号 14 (2019) Nanostructures Characterization Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells