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Author Details

Tarasova, E. A.

Issue Section Title File
Vol 50, No 3 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Vol 50, No 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
Vol 50, No 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
Vol 51, No 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
Vol 52, No 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation