| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation |
|
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
|
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account |
|
| Том 51, № 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
|
| Том 52, № 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
|
