| Issue |
Section |
Title |
File |
| Vol 50, No 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method |
|
| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics |
|
| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics |
|
| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
|
