Author Details

Skorohodov, E. V.

Issue	Section	Title	File
Vol 50, No 2 (2016)	Fabrication, Treatment, and Testing of Materials and Structures	Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Vol 50, No 11 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Vol 51, No 12 (2017)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Vol 52, No 11 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics
Vol 53, No 10 (2019)	Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019	Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics
Vol 53, No 10 (2019)	Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019	Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers