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Author Details

Tuktamyshev, A. R.

Issue Section Title File
Vol 50, No 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Strained multilayer structures with pseudomorphic GeSiSn layers
Vol 51, No 3 (2017) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Valence-band offsets in strained SiGeSn/Si layers with different tin contents
Vol 52, No 3 (2018) Fabrication, Treatment, and Testing of Materials and Structures Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands