Автор туралы ақпарат
Tuktamyshev, A. R.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 50, № 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Strained multilayer structures with pseudomorphic GeSiSn layers | |
| Том 51, № 3 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Valence-band offsets in strained SiGeSn/Si layers with different tin contents | |
| Том 52, № 3 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |