Informaçao sobre o Autor
Tuktamyshev, A. R.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Strained multilayer structures with pseudomorphic GeSiSn layers | |
| Volume 51, Nº 3 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Valence-band offsets in strained SiGeSn/Si layers with different tin contents | |
| Volume 52, Nº 3 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |