Author Details

Struchkov, A. I.

Issue Section Title File
Vol 53, No 11 (2019) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies