作者的详细信息
Struchkov, A. I.
期 | 栏目 | 标题 | 文件 |
卷 53, 编号 11 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |