Author Details
Kuzmenkov, A.
Issue | Section | Title | File |
Vol 50, No 10 (2016) | Physics of Semiconductor Devices | Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture | |
Vol 51, No 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors | |
Vol 52, No 1 (2018) | Physics of Semiconductor Devices | Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells | |
Vol 53, No 8 (2019) | Physics of Semiconductor Devices | Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |