Author Details

Kudrin, A. V.

Issue Section Title File
Vol 50, No 2 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena GaAs structures with a gate dielectric based on aluminum-oxide layers
Vol 50, No 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
Vol 50, No 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 On the crystal structure and thermoelectric properties of thin Si1–xMnx films
Vol 50, No 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn
Vol 51, No 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Optical thyristor based on GaAs/InGaP materials
Vol 51, No 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Features of the selective manganese doping of GaAs structures
Vol 51, No 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Contactless characterization of manganese and carbon delta-layers in gallium arsenide
Vol 52, No 8 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions
Vol 52, No 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures
Vol 53, No 3 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition

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