| Issue |
Title |
File |
| Vol 50, No 3 (2016) |
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation |
(Eng)
|
|
Popov V.D.
|
| Vol 50, No 3 (2016) |
Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling |
(Eng)
|
|
Yakovlev G.E., Frolov D.S., Zubkova A.V., Levina E.E., Zubkov V.I., Solomonov A.V., Sterlyadkin O.K., Sorokin S.A.
|
| Vol 50, No 3 (2016) |
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation |
(Eng)
|
|
Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.
|
| Vol 50, No 3 (2016) |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
(Eng)
|
|
Orletsky I.G., Ilashchuk M.I., Brus V.V., Marianchuk P.D., Solovan M.M., Kovalyuk Z.D.
|
| Vol 50, No 2 (2016) |
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates |
(Eng)
|
|
Khabibullin R.A., Yachmenev A.E., Lavrukhin D.V., Ponomarev D.S., Bugayev A.S., Maltsev P.P.
|
| Vol 50, No 2 (2016) |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
(Eng)
|
|
Aleksandrov I.A., Zhuravlev K.S., Mansurov V.G.
|
| Vol 50, No 2 (2016) |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
(Eng)
|
|
Galiev G.B., Klimov E.A., Grekhov M.M., Pushkarev S.S., Lavrukhin D.V., Maltsev P.P.
|
| Vol 50, No 2 (2016) |
GaAs structures with a gate dielectric based on aluminum-oxide layers |
(Eng)
|
|
Kalentyeva I.L., Vikhrova O.V., Zdoroveyshchev A.V., Danilov Y.A., Kudrin A.V.
|
| Vol 50, No 2 (2016) |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
(Eng)
|
|
Mynbaev K.D., Zablotsky S.V., Shilyaev A.V., Bazhenov N.L., Yakushev M.V., Marin D.V., Varavin V.S., Dvoretsky S.A.
|
| Vol 50, No 1 (2016) |
Vertical heterostructures based on graphene and other 2D materials |
(Eng)
|
|
Antonova I.V.
|
| Vol 50, No 1 (2016) |
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry |
(Eng)
|
|
Makeev M.O., Ivanov Y.A., Meshkov S.A.
|
| Vol 50, No 1 (2016) |
On controlling the electronic states of shallow donors using a finite-size metal gate |
(Eng)
|
|
Levchuk E.A., Makarenko L.F.
|
| 151 - 162 of 162 Items |
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