| Шығарылым |
Атауы |
Файл |
| Том 52, № 11 (2018) |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
(Eng)
|
|
Zhukov A., Gordeev N., Shernyakov Y., Payusov A., Serin A., Kulagina M., Mintairov S., Kalyuzhnyy N., Maximov M.
|
| Том 52, № 11 (2018) |
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T |
(Eng)
|
|
Bovkun L., Maremyanin K., Ikonnikov A., Spirin K., Aleshkin V., Potemski M., Piot B., Orlita M., Mikhailov N., Dvoretskii S., Gavrilenko V.
|
| Том 52, № 11 (2018) |
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells |
(Eng)
|
|
Dobretsova A., Kvon Z., Braginskii L., Entin M., Mikhailov N.
|
| Том 52, № 11 (2018) |
Spinodal Decomposition in InSb/AlAs Heterostructures |
(Eng)
|
|
Abramkin D., Bakarov A., Gutakovskii A., Shamirzaev T.
|
| Том 52, № 11 (2018) |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
(Eng)
|
|
Okhapkin A., Yunin P., Drozdov M., Kraev S., Skorokhodov E., Shashkin V.
|
| Том 52, № 11 (2018) |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
(Eng)
|
|
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Antonov I.
|
| Том 52, № 11 (2018) |
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation |
(Eng)
|
|
Khananova A., Obolensky S.
|
| Том 52, № 11 (2018) |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
(Eng)
|
|
Gudina S., Bogolyubskii A., Neverov V., Shelushinina N., Yakunin M.
|
| Том 52, № 11 (2018) |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
(Eng)
|
|
Abramkin D., Petrushkov M., Putyato M., Semyagin B., Shamirzaev T.
|
| Том 52, № 11 (2018) |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
(Eng)
|
|
Puzanov A., Obolenskiy S., Kozlov V.
|
| Том 52, № 11 (2018) |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
(Eng)
|
|
Drozdov Y., Khrikin O., Yunin P.
|
| Том 52, № 11 (2018) |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
(Eng)
|
|
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
|
| Том 52, № 11 (2018) |
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates |
(Eng)
|
|
Kudryatvsev K., Dubinov A., Aleshkin V., Yurasov D., Gorlachuk P., Ryaboshtan Y., Marmalyuk A., Novikov A., Krasilnik Z.
|
| Том 52, № 11 (2018) |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
(Eng)
|
|
Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kotlyar K., Ilkiv I., Soshnikov I., Kirilenko D., Kryzhanovskaya N.
|
| Том 52, № 11 (2018) |
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond |
(Eng)
|
|
Bekin N.
|
| Том 52, № 11 (2018) |
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region |
(Eng)
|
|
Morozov K., Ivanov K., Selenin N., Mikhrin S., de Sa Pereira D., Menelaou C., Monkman A., Kaliteevski M.
|
| Том 52, № 11 (2018) |
Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure |
(Eng)
|
|
Novodvorsky O., Mikhalevsky V., Gusev D., Lotin A., Parshina L., Khramova O., Cherebylo E., Drovosekov A., Rylkov V., Nikolaev S., Chernoglazov K., Maslakov K.
|
| Нәтижелер 42 - 26/42 |
<< < 1 2
|
