| Issue | 
        Title | 
        File | 
		| Vol 52, No 11 (2018) | 
	Study of the Structural and Morphological Properties of HPHT Diamond Substrates | 
	
									  (Eng)
						 | 
	| 
		Yunin P.A., Volkov P.V., Drozdov Y.N., Koliadin A.V., Korolev S.A., Radischev D.B., Surovegina E.A., Shashkin V.I.
	 | 
		| Vol 52, No 11 (2018) | 
	Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots | 
	
									  (Eng)
						 | 
	| 
		Derebezov I.A., Gaisler V.A., Gaisler A.V., Dmitriev D.V., Toropov A.I., von Helversen M., de la Haye C., Bounouar S., Reitzenstein S.
	 | 
		| Vol 52, No 11 (2018) | 
	Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics | 
	
									  (Eng)
						 | 
	| 
		Novikov A.V., Yurasov D.V., Morozova E.E., Skorohodov E.V., Verbus V.A., Yablonskiy A.N., Baidakova N.A., Gusev N.S., Kudryavtsev K.E., Nezhdanov A.V., Mashin A.I.
	 | 
		| Vol 52, No 11 (2018) | 
	Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers | 
	
									  (Eng)
						 | 
	| 
		Kozlov D.V., Rumyantsev V.V., Morozov S.V., Kadykov A.M., Fadeev M.A., Hübers H., Gavrilenko V.I.
	 | 
		| Vol 52, No 11 (2018) | 
	Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices | 
	
									  (Eng)
						 | 
	| 
		Pavelyev D.G., Vasilev A.P., Kozlov V.A., Obolenskaya E.S.
	 | 
		| Vol 52, No 11 (2018) | 
	Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells | 
	
									  (Eng)
						 | 
	| 
		Rumyantsev V.V., Kulikov N.S., Kadykov A.M., Fadeev M.A., Ikonnikov A.V., Kazakov A.S., Zholudev M.S., Aleshkin V.Y., Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
	 | 
		| Vol 52, No 11 (2018) | 
	Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface | 
	
									  (Eng)
						 | 
	| 
		Rudin S.A., Smagina Z.V., Zinovyev V.A., Novikov P.L., Nenashev A.V., Rodyakina E.E., Dvurechenskii A.V.
	 | 
		| Vol 52, No 11 (2018) | 
	Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz | 
	
									  (Eng)
						 | 
	| 
		Khabibullin R.A., Shchavruk N.V., Ponomarev D.S., Ushakov D.V., Afonenko A.A., Vasil’evskii I.S., Zaycev A.A., Danilov A.I., Volkov O.Y., Pavlovskiy V.V., Maremyanin K.V., Gavrilenko V.I.
	 | 
		| Vol 52, No 11 (2018) | 
	Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides | 
	
									  (Eng)
						 | 
	| 
		Zhukov A.E., Gordeev N.Y., Shernyakov Y.M., Payusov A.S., Serin A.A., Kulagina M.M., Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V.
	 | 
		| Vol 52, No 11 (2018) | 
	Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T | 
	
									  (Eng)
						 | 
	| 
		Bovkun L.S., Maremyanin K.V., Ikonnikov A.V., Spirin K.E., Aleshkin V.Y., Potemski M., Piot B.A., Orlita M., Mikhailov N.N., Dvoretskii S.A., Gavrilenko V.I.
	 | 
		| Vol 52, No 11 (2018) | 
	Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells | 
	
									  (Eng)
						 | 
	| 
		Dobretsova A.A., Kvon Z.D., Braginskii L.S., Entin M.V., Mikhailov N.N.
	 | 
		| Vol 52, No 11 (2018) | 
	Spinodal Decomposition in InSb/AlAs Heterostructures | 
	
									  (Eng)
						 | 
	| 
		Abramkin D.S., Bakarov A.K., Gutakovskii A.K., Shamirzaev T.S.
	 | 
		| Vol 52, No 11 (2018) | 
	Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma | 
	
									  (Eng)
						 | 
	| 
		Okhapkin A.I., Yunin P.A., Drozdov M.N., Kraev S.A., Skorokhodov E.V., Shashkin V.I.
	 | 
		| Vol 52, No 11 (2018) | 
	The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures | 
	
									  (Eng)
						 | 
	| 
		Kalentyeva I.L., Vikhrova O.V., Danilov Y.A., Zvonkov B.N., Kudrin A.V., Antonov I.N.
	 | 
		| Vol 52, No 11 (2018) | 
	Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation | 
	
									  (Eng)
						 | 
	| 
		Khananova A.V., Obolensky S.V.
	 | 
		| Vol 52, No 11 (2018) | 
	“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase | 
	
									  (Eng)
						 | 
	| 
		Gudina S.V., Bogolyubskii A.S., Neverov V.N., Shelushinina N.G., Yakunin M.V.
	 | 
		| Vol 52, No 11 (2018) | 
	Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates | 
	
									  (Eng)
						 | 
	| 
		Abramkin D.S., Petrushkov M.O., Putyato M.A., Semyagin B.R., Shamirzaev T.S.
	 | 
	
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