Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018

Шығарылым Атауы Файл
Том 52, № 11 (2018) Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides PDF
(Eng)
Zhukov A., Gordeev N., Shernyakov Y., Payusov A., Serin A., Kulagina M., Mintairov S., Kalyuzhnyy N., Maximov M.
Том 52, № 11 (2018) Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T PDF
(Eng)
Bovkun L., Maremyanin K., Ikonnikov A., Spirin K., Aleshkin V., Potemski M., Piot B., Orlita M., Mikhailov N., Dvoretskii S., Gavrilenko V.
Том 52, № 11 (2018) Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells PDF
(Eng)
Dobretsova A., Kvon Z., Braginskii L., Entin M., Mikhailov N.
Том 52, № 11 (2018) Spinodal Decomposition in InSb/AlAs Heterostructures PDF
(Eng)
Abramkin D., Bakarov A., Gutakovskii A., Shamirzaev T.
Том 52, № 11 (2018) Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma PDF
(Eng)
Okhapkin A., Yunin P., Drozdov M., Kraev S., Skorokhodov E., Shashkin V.
Том 52, № 11 (2018) The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures PDF
(Eng)
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Antonov I.
Том 52, № 11 (2018) Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation PDF
(Eng)
Khananova A., Obolensky S.
Том 52, № 11 (2018) “Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase PDF
(Eng)
Gudina S., Bogolyubskii A., Neverov V., Shelushinina N., Yakunin M.
Том 52, № 11 (2018) Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates PDF
(Eng)
Abramkin D., Petrushkov M., Putyato M., Semyagin B., Shamirzaev T.
Том 52, № 11 (2018) Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation PDF
(Eng)
Puzanov A., Obolenskiy S., Kozlov V.
Том 52, № 11 (2018) Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut PDF
(Eng)
Drozdov Y., Khrikin O., Yunin P.
Том 52, № 11 (2018) Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire PDF
(Eng)
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
Том 52, № 11 (2018) Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates PDF
(Eng)
Kudryatvsev K., Dubinov A., Aleshkin V., Yurasov D., Gorlachuk P., Ryaboshtan Y., Marmalyuk A., Novikov A., Krasilnik Z.
Том 52, № 11 (2018) Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon PDF
(Eng)
Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kotlyar K., Ilkiv I., Soshnikov I., Kirilenko D., Kryzhanovskaya N.
Том 52, № 11 (2018) Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond PDF
(Eng)
Bekin N.
Том 52, № 11 (2018) Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region PDF
(Eng)
Morozov K., Ivanov K., Selenin N., Mikhrin S., de Sa Pereira D., Menelaou C., Monkman A., Kaliteevski M.
Том 52, № 11 (2018) Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure PDF
(Eng)
Novodvorsky O., Mikhalevsky V., Gusev D., Lotin A., Parshina L., Khramova O., Cherebylo E., Drovosekov A., Rylkov V., Nikolaev S., Chernoglazov K., Maslakov K.
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