| Issue |
Title |
File |
| Vol 53, No 1 (2019) |
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |
(Eng)
|
|
Bannaya V.F., Nikitina E.V.
|
| Vol 52, No 13 (2018) |
Features of the Electron Mobility in the n-InSe Layered Semiconductor |
(Eng)
|
|
Abdinov A.S., Babayeva R.F.
|
| Vol 52, No 13 (2018) |
Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method |
(Eng)
|
|
Usanov D.A., Postelga A.E., Kalyamin A.A., Sharov I.V.
|
| Vol 52, No 13 (2018) |
Conduction-Electron Spin Resonance in HgSe Crystals |
(Eng)
|
|
Veinger A.I., Kochman I.V., Okulov V.I., Andriichuk M.D., Paranchich L.D.
|
| Vol 52, No 13 (2018) |
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |
(Eng)
|
|
Emtsev V.V., Abrosimov N.V., Kozlovski V.V., Poloskin D.S., Oganesyan G.A.
|
| Vol 52, No 10 (2018) |
Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions |
(Eng)
|
|
Sardarli R.M., Abdullayev A.P., Aliyeva N.A., Salmanov F.T., Yusifov M.Y., Orudjeva A.A.
|
| Vol 52, No 8 (2018) |
Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals |
(Eng)
|
|
Veinger A.I., Kochman I.V., Okulov V.I., Andriichuk M.D., Paranchich L.D.
|
| Vol 52, No 8 (2018) |
Electronic Processes in CdIn2Te4 Crystals |
(Eng)
|
|
Grushka O.G., Chupyra S.M., Bilichuk S.V., Parfenyuk O.A.
|
| Vol 52, No 8 (2018) |
Optical Absorption of Copper-Activated Zinc-Sulfide Polycrystalline Layers |
(Eng)
|
|
Avanesyan V.T., Rakina A.V., Kablukova N.S.
|
| Vol 52, No 7 (2018) |
Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–x–ySnxVyTe Alloys upon Doping |
(Eng)
|
|
Skipetrov E.P., Konstantinov N.S., Skipetrova L.A., Knotko A.V., Slynko V.E.
|
| Vol 52, No 7 (2018) |
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion |
(Eng)
|
|
Ishchenko D.V., Neizvestny I.G.
|
| Vol 52, No 7 (2018) |
Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation |
(Eng)
|
|
Jahangirli Z.A., Hashimzade F.M., Huseynova D.A., Mehdiyev B.G., Mustafaev N.B.
|
| Vol 52, No 6 (2018) |
AC Electrical Conductivity of FeIn2Se4 Single Crystals |
(Eng)
|
|
Niftiyev N.N., Mammadov F.M., Quseynov V.I., Kurbanov S.S.
|
| Vol 52, No 6 (2018) |
Contribution of Iron Clusters to the Magnetic Properties of Pb1 – yFeyTe Alloys |
(Eng)
|
|
Skipetrov E.P., Solovev A.A., Slynko V.E.
|
| Vol 52, No 6 (2018) |
Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures |
(Eng)
|
|
Poklonski N.A., Vyrko S.A., Dzeraviaha A.N.
|
| Vol 52, No 6 (2018) |
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |
(Eng)
|
|
Evstigneev V.S., Varavin V.S., Chilyasov A.V., Remesnik V.G., Moiseev A.N., Stepanov B.S.
|
| Vol 52, No 6 (2018) |
On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
(Eng)
|
|
Terukov E.I., Marchenko A.V., Seregin P.P., Zhukov N.N.
|
| Vol 52, No 3 (2018) |
Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals |
(Eng)
|
|
Morozova N.K., Miroshnikov B.N.
|
| Vol 52, No 3 (2018) |
Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System |
(Eng)
|
|
Borshch N.A., Kurganskii S.I.
|
| Vol 52, No 3 (2018) |
Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands |
(Eng)
|
|
Sobolev V.V., Perevoshchikov D.A.
|
| Vol 52, No 3 (2018) |
Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |
(Eng)
|
|
Romaka V.A., Rogl P.-., Frushart D., Kaczorowski D.
|
| Vol 52, No 3 (2018) |
Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals |
(Eng)
|
|
Plyatsko S.V., Rashkovetskyi L.V.
|
| Vol 52, No 3 (2018) |
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers |
(Eng)
|
|
Kozlovski V.V., Vasil’ev A.E., Karaseov P.A., Lebedev A.A.
|
| Vol 52, No 3 (2018) |
Electrical Breakdown in Pure n- and p-Si |
(Eng)
|
|
Bannaya V.F., Nikitina E.V.
|
| Vol 52, No 2 (2018) |
Conductivity of Ga2O3–GaAs Heterojunctions |
(Eng)
|
|
Kalygina V.M., Remizova I.L., Tolbanov O.P.
|
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