Electronic Properties of Semiconductors

Issue Title File
Vol 53, No 1 (2019) Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium PDF
(Eng)
Bannaya V.F., Nikitina E.V.
Vol 52, No 13 (2018) Features of the Electron Mobility in the n-InSe Layered Semiconductor PDF
(Eng)
Abdinov A.S., Babayeva R.F.
Vol 52, No 13 (2018) Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method PDF
(Eng)
Usanov D.A., Postelga A.E., Kalyamin A.A., Sharov I.V.
Vol 52, No 13 (2018) Conduction-Electron Spin Resonance in HgSe Crystals PDF
(Eng)
Veinger A.I., Kochman I.V., Okulov V.I., Andriichuk M.D., Paranchich L.D.
Vol 52, No 13 (2018) Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge PDF
(Eng)
Emtsev V.V., Abrosimov N.V., Kozlovski V.V., Poloskin D.S., Oganesyan G.A.
Vol 52, No 10 (2018) Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions PDF
(Eng)
Sardarli R.M., Abdullayev A.P., Aliyeva N.A., Salmanov F.T., Yusifov M.Y., Orudjeva A.A.
Vol 52, No 8 (2018) Electronic Processes in CdIn2Te4 Crystals PDF
(Eng)
Grushka O.G., Chupyra S.M., Bilichuk S.V., Parfenyuk O.A.
Vol 52, No 8 (2018) Optical Absorption of Copper-Activated Zinc-Sulfide Polycrystalline Layers PDF
(Eng)
Avanesyan V.T., Rakina A.V., Kablukova N.S.
Vol 52, No 8 (2018) Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals PDF
(Eng)
Veinger A.I., Kochman I.V., Okulov V.I., Andriichuk M.D., Paranchich L.D.
Vol 52, No 7 (2018) Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–xySnxVyTe Alloys upon Doping PDF
(Eng)
Skipetrov E.P., Konstantinov N.S., Skipetrova L.A., Knotko A.V., Slynko V.E.
Vol 52, No 7 (2018) Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion PDF
(Eng)
Ishchenko D.V., Neizvestny I.G.
Vol 52, No 7 (2018) Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation PDF
(Eng)
Jahangirli Z.A., Hashimzade F.M., Huseynova D.A., Mehdiyev B.G., Mustafaev N.B.
Vol 52, No 6 (2018) AC Electrical Conductivity of FeIn2Se4 Single Crystals PDF
(Eng)
Niftiyev N.N., Mammadov F.M., Quseynov V.I., Kurbanov S.S.
Vol 52, No 6 (2018) Contribution of Iron Clusters to the Magnetic Properties of Pb1 – yFeyTe Alloys PDF
(Eng)
Skipetrov E.P., Solovev A.A., Slynko V.E.
Vol 52, No 6 (2018) Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures PDF
(Eng)
Poklonski N.A., Vyrko S.A., Dzeraviaha A.N.
Vol 52, No 6 (2018) Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method PDF
(Eng)
Evstigneev V.S., Varavin V.S., Chilyasov A.V., Remesnik V.G., Moiseev A.N., Stepanov B.S.
Vol 52, No 6 (2018) On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes PDF
(Eng)
Terukov E.I., Marchenko A.V., Seregin P.P., Zhukov N.N.
Vol 52, No 3 (2018) Electrical Breakdown in Pure n- and p-Si PDF
(Eng)
Bannaya V.F., Nikitina E.V.
Vol 52, No 3 (2018) Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals PDF
(Eng)
Morozova N.K., Miroshnikov B.N.
Vol 52, No 3 (2018) Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System PDF
(Eng)
Borshch N.A., Kurganskii S.I.
Vol 52, No 3 (2018) Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands PDF
(Eng)
Sobolev V.V., Perevoshchikov D.A.
Vol 52, No 3 (2018) Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity PDF
(Eng)
Romaka V.A., Rogl P.-., Frushart D., Kaczorowski D.
Vol 52, No 3 (2018) Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals PDF
(Eng)
Plyatsko S.V., Rashkovetskyi L.V.
Vol 52, No 3 (2018) Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers PDF
(Eng)
Kozlovski V.V., Vasil’ev A.E., Karaseov P.A., Lebedev A.A.
Vol 52, No 2 (2018) Conductivity of Ga2O3–GaAs Heterojunctions PDF
(Eng)
Kalygina V.M., Remizova I.L., Tolbanov O.P.
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