On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
- Авторлар: Seredin P.1,2, Fedyukin A.1, Terekhov V.1, Barkov K.1, Arsentyev I.3, Bondarev A.3, Fomin E.3,4, Pikhtin N.3,4
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Мекемелер:
- Voronezh State University
- Ural Federal University
- Ioffe Institute
- St. Petersburg State Electrotechnical University “LETI”
- Шығарылым: Том 53, № 11 (2019)
- Беттер: 1550-1557
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207333
- DOI: https://doi.org/10.1134/S1063782619110174
- ID: 207333
Дәйексөз келтіру
Аннотация
Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different degrees. It is shown that growth on substrates misoriented with respect to the 〈100〉 direction to different degrees results in the formation of AlN films with different phase compositions and crystal states. An increase in the degree of misorientation of the GaAs(100) substrate used for growth influences both the structural quality of AlN nanofilms and their electronic structure, surface morphology, and optical properties. Thus, the morphology, surface composition, and optical functional characteristics of AlN/GaAs(100) heterophase systems can be controlled using differently misoriented GaAs(100) substrates.
Негізгі сөздер
Авторлар туралы
P. Seredin
Voronezh State University; Ural Federal University
Хат алмасуға жауапты Автор.
Email: paul@phys.vsu.ru
Ресей, Voronezh, 394006; Ekaterinburg, 620002
A. Fedyukin
Voronezh State University
Email: paul@phys.vsu.ru
Ресей, Voronezh, 394006
V. Terekhov
Voronezh State University
Email: paul@phys.vsu.ru
Ресей, Voronezh, 394006
K. Barkov
Voronezh State University
Email: paul@phys.vsu.ru
Ресей, Voronezh, 394006
I. Arsentyev
Ioffe Institute
Email: paul@phys.vsu.ru
Ресей, St. Petersburg, 194021
A. Bondarev
Ioffe Institute
Email: paul@phys.vsu.ru
Ресей, St. Petersburg, 194021
E. Fomin
Ioffe Institute; St. Petersburg State Electrotechnical University “LETI”
Email: paul@phys.vsu.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197022
N. Pikhtin
Ioffe Institute; St. Petersburg State Electrotechnical University “LETI”
Email: paul@phys.vsu.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197022