Отправить статью по E-mail Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
- Авторы: Cherkova S.1, Skuratov V.2,3,4, Volodin V.1,5
-
Учреждения:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Joint Institute for Nuclear Research
- National Research Nuclear University “MEPhI”
- Dubna State University
- Novosibirsk State University
- Выпуск: Том 53, № 11 (2019)
- Страницы: 1427-1430
- Раздел: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/207260
- DOI: https://doi.org/10.1134/S1063782619110046
- ID: 207260
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.
Ключевые слова
Об авторах
S. Cherkova
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: cherkova@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Skuratov
Joint Institute for Nuclear Research; National Research Nuclear University “MEPhI”; Dubna State University
Email: cherkova@isp.nsc.ru
Россия, Dubna, Moscow region, 141980; Moscow, 115409; Dubna, Moscow region, 141982
V. Volodin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: cherkova@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
