Enviar artigo por via de e-mail Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
- Autores: Cherkova S.1, Skuratov V.2,3,4, Volodin V.1,5
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Afiliações:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Joint Institute for Nuclear Research
- National Research Nuclear University “MEPhI”
- Dubna State University
- Novosibirsk State University
- Edição: Volume 53, Nº 11 (2019)
- Páginas: 1427-1430
- Seção: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/207260
- DOI: https://doi.org/10.1134/S1063782619110046
- ID: 207260
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Resumo
The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.
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Sobre autores
S. Cherkova
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: cherkova@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Skuratov
Joint Institute for Nuclear Research; National Research Nuclear University “MEPhI”; Dubna State University
Email: cherkova@isp.nsc.ru
Rússia, Dubna, Moscow region, 141980; Moscow, 115409; Dubna, Moscow region, 141982
V. Volodin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: cherkova@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
