Отправить статью по E-mail Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers
- Авторы: Blokhin S.1, Bobrov M.1, Blokhin A.1,2, Kuzmenkov A.2, Maleev N.1, Ustinov V.2, Kolodeznyi E.3, Rochas S.3, Babichev A.3, Novikov I.3, Gladyshev A.3, Karachinsky L.1,4, Denisov D.4,5, Voropaev K.6,7, Ionov A.7, Egorov A.3
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Учреждения:
- Ioffe Institute
- Research and Engineering Center for Submicron Heterostructures for Microelectronics
- ITMO University
- Connector Optics LLC
- St. Petersburg State Electrotechnical University “LETI”
- Yaroslav-the-Wise Novgorod State University
- OKB-Planeta PLC
- Выпуск: Том 53, № 8 (2019)
- Страницы: 1104-1109
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206662
- DOI: https://doi.org/10.1134/S1063782619080074
- ID: 206662
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Аннотация
The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser make it possible in principle to attain a high level of differential laser gain in the temperature range of 20°C–85°C, but weak electron localization leads to an increase in gain compression at elevated temperatures. Due to this fact, the VCSEL modulation bandwidth at 20°C can be increased from 9.2 to 11.5 GHz due to an increase in output optical losses, while the modulation bandwidth at 85°C does not exceed 8.5 GHz, depends weakly on the output optical losses, and is mainly limited by the optical-gain saturation.
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Об авторах
S. Blokhin
Ioffe Institute
Автор, ответственный за переписку.
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Bobrov
Ioffe Institute
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Blokhin
Ioffe Institute; Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
A. Kuzmenkov
Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Maleev
Ioffe Institute
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Ustinov
Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021
E. Kolodeznyi
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
S. Rochas
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
A. Babichev
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
I. Novikov
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
A. Gladyshev
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
L. Karachinsky
Ioffe Institute; Connector Optics LLC
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194292
D. Denisov
Connector Optics LLC; St. Petersburg State Electrotechnical University “LETI”
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 194292; St. Petersburg, 197376
K. Voropaev
Yaroslav-the-Wise Novgorod State University; OKB-Planeta PLC
Email: blokh@mail.ioffe.ru
Россия, Veliky Novgorod, 173003; Veliky Novgorod, 173004
A. Ionov
OKB-Planeta PLC
Email: blokh@mail.ioffe.ru
Россия, Veliky Novgorod, 173004
A. Egorov
ITMO University
Email: blokh@mail.ioffe.ru
Россия, St. Petersburg, 197101
