Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers
- 作者: Blokhin S.1, Bobrov M.1, Blokhin A.1,2, Kuzmenkov A.2, Maleev N.1, Ustinov V.2, Kolodeznyi E.3, Rochas S.3, Babichev A.3, Novikov I.3, Gladyshev A.3, Karachinsky L.1,4, Denisov D.4,5, Voropaev K.6,7, Ionov A.7, Egorov A.3
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隶属关系:
- Ioffe Institute
- Research and Engineering Center for Submicron Heterostructures for Microelectronics
- ITMO University
- Connector Optics LLC
- St. Petersburg State Electrotechnical University “LETI”
- Yaroslav-the-Wise Novgorod State University
- OKB-Planeta PLC
- 期: 卷 53, 编号 8 (2019)
- 页面: 1104-1109
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206662
- DOI: https://doi.org/10.1134/S1063782619080074
- ID: 206662
如何引用文章
详细
The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser make it possible in principle to attain a high level of differential laser gain in the temperature range of 20°C–85°C, but weak electron localization leads to an increase in gain compression at elevated temperatures. Due to this fact, the VCSEL modulation bandwidth at 20°C can be increased from 9.2 to 11.5 GHz due to an increase in output optical losses, while the modulation bandwidth at 85°C does not exceed 8.5 GHz, depends weakly on the output optical losses, and is mainly limited by the optical-gain saturation.
作者简介
S. Blokhin
Ioffe Institute
编辑信件的主要联系方式.
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Bobrov
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Blokhin
Ioffe Institute; Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
A. Kuzmenkov
Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Maleev
Ioffe Institute
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Ustinov
Research and Engineering Center for Submicron Heterostructures for Microelectronics
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Kolodeznyi
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
S. Rochas
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
A. Babichev
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
I. Novikov
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
A. Gladyshev
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101
L. Karachinsky
Ioffe Institute; Connector Optics LLC
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194292
D. Denisov
Connector Optics LLC; St. Petersburg State Electrotechnical University “LETI”
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194292; St. Petersburg, 197376
K. Voropaev
Yaroslav-the-Wise Novgorod State University; OKB-Planeta PLC
Email: blokh@mail.ioffe.ru
俄罗斯联邦, Veliky Novgorod, 173003; Veliky Novgorod, 173004
A. Ionov
OKB-Planeta PLC
Email: blokh@mail.ioffe.ru
俄罗斯联邦, Veliky Novgorod, 173004
A. Egorov
ITMO University
Email: blokh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197101