On the Properties of Isoparametric AlInGaAsP/InP Heterostructures
- Autores: Alfimova D.1, Lunin L.1, Lunina M.1, Pashchenko A.1, Danilina E.1
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Afiliações:
- Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
- Edição: Volume 53, Nº 7 (2019)
- Páginas: 887-891
- Seção: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/206457
- DOI: https://doi.org/10.1134/S1063782619070029
- ID: 206457
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Resumo
The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phosphide substrates from the liquid phase in a temperature-gradient field are determined.
Sobre autores
D. Alfimova
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
L. Lunin
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Autor responsável pela correspondência
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
M. Lunina
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
A. Pashchenko
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
E. Danilina
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006