On the Properties of Isoparametric AlInGaAsP/InP Heterostructures

D. L. Alfimova; L. S. Lunin; M. L. Lunina; A. S. Pashchenko; E. M. Danilina

doi:10.1134/S1063782619070029

On the Properties of Isoparametric AlInGaAsP/InP Heterostructures

作者: Alfimova D.¹, Lunin L.¹, Lunina M.¹, Pashchenko A.¹, Danilina E.¹
隶属关系:
1. Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
期: 卷 53, 编号 7 (2019)
页面: 887-891
栏目: Surfaces, Interfaces, and Thin Films
URL: https://journals.rcsi.science/1063-7826/article/view/206457
DOI: https://doi.org/10.1134/S1063782619070029
ID: 206457

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详细

The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phosphide substrates from the liquid phase in a temperature-gradient field are determined.