On the Properties of Isoparametric AlInGaAsP/InP Heterostructures
- Authors: Alfimova D.L.1, Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Danilina E.M.1
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Affiliations:
- Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
- Issue: Vol 53, No 7 (2019)
- Pages: 887-891
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/206457
- DOI: https://doi.org/10.1134/S1063782619070029
- ID: 206457
Cite item
Abstract
The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phosphide substrates from the liquid phase in a temperature-gradient field are determined.
About the authors
D. L. Alfimova
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
L. S. Lunin
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
M. L. Lunina
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
A. S. Pashchenko
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
E. M. Danilina
Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006