Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon
- Autores: Orlov V.1,2, Yarykin N.1, Yakimov E.1,3
-
Afiliações:
- Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences
- Institute of Solid-State Physics, Russian Academy of Sciences
- National University of Science and Technology “MISiS”
- Edição: Volume 53, Nº 4 (2019)
- Páginas: 411-414
- Seção: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/205908
- DOI: https://doi.org/10.1134/S1063782619040225
- ID: 205908
Citar
Resumo
The change in the recombination properties of individual dislocations and dislocation trails in silicon due to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature is studied by the electron-beam- and light-beam-induced current techniques. It is found that the introduction of nickel results in an increase in the recombination activity of both dislocations and dislocation trails. The introduction of copper does not induce any substantial change in the contrast of extended defects.
Sobre autores
V. Orlov
Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences; Institute of Solid-State Physics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: orlov@issp.ac.ru
Rússia, Chernogolovka, Moscow region, 142432; Chernogolovka, Moscow region, 142432
N. Yarykin
Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences
Email: orlov@issp.ac.ru
Rússia, Chernogolovka, Moscow region, 142432
E. Yakimov
Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences; National University of Science and Technology “MISiS”
Email: orlov@issp.ac.ru
Rússia, Chernogolovka, Moscow region, 142432; Moscow, 119049