Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation

M. M. Venediktov; D. I. Dukov; M. A. Krevskiy; I. O. Metelkin; G. V. Chukov; V. V. Elesin; S. V. Obolensky; A. D. Bozhen’kina; E. A. Tarasova; A. G. Fefelov

doi:10.1134/S1063782618120266

Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation

作者: Venediktov M.¹, Dukov D.², Krevskiy M.², Metelkin I.³, Chukov G.³, Elesin V.³, Obolensky S.⁴, Bozhen’kina A.⁴, Tarasova E.⁴, Fefelov A.²
隶属关系:
1. Federal Research and Production Center “Y. Sedakov Research Institute of Measuring Systems”
2. OAO Research-and-Production Enterprise “Salut”
3. National Research Nuclear University “MEPhI”
4. Lobachevsky State University of Nizhny Novgorod
期: 卷 52, 编号 12 (2018)
页面: 1518-1524
栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
URL: https://journals.rcsi.science/1063-7826/article/view/204648
DOI: https://doi.org/10.1134/S1063782618120266
ID: 204648

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详细

The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.