SemiconductorsSemiconductorsSemiconductors1063-78261090-6479Физико-технический институт им. А.Ф.Иоффе РАН20464810.1134/S1063782618120266Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018Research ArticleAnalysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron IrradiationVenediktovM. M.
Russian Federation
thelen@yandex.ruDukovD. I.
Russian Federation
obolensk@rf.unn.ruKrevskiyM. A.
Russian Federation
obolensk@rf.unn.ruMetelkinI. O.
Russian Federation
obolensk@rf.unn.ruChukovG. V.
Russian Federation
obolensk@rf.unn.ruElesinV. V.
Russian Federation
obolensk@rf.unn.ruObolenskyS. V.
Russian Federation
obolensk@rf.unn.ruBozhen’kinaA. D.
Russian Federation
obolensk@rf.unn.ruTarasovaE. A.
Russian Federation
obolensk@rf.unn.ruFefelovA. G.
Russian Federation
obolensk@rf.unn.ruFederal Research and Production Center “Y. Sedakov Research Institute of Measuring Systems”OAO Research-and-Production Enterprise “Salut”National Research Nuclear University “MEPhI”Lobachevsky State University of Nizhny Novgorod1211201852121518152423122023Copyright ©; 2018, Pleiades Publishing, Ltd.2018Pleiades Publishing, Ltd.https://journals.rcsi.science/1063-7826/article/view/204648

The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.

Microwave TransistorsRadiation-induced Defect Clusters (RDCs)Electron Distribution ProfilesBulk Ionization ConductivityTransistor Current