Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz
- 作者: Khabibullin R.1, Shchavruk N.1, Ponomarev D.1, Ushakov D.2, Afonenko A.2, Vasil’evskii I.3, Zaycev A.4, Danilov A.5, Volkov O.6, Pavlovskiy V.6, Maremyanin K.7, Gavrilenko V.7
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隶属关系:
- Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
- Belarusian State University
- National Research Nuclear University MEPhI
- National Research University of Electronic Technology MIET
- AO Polyus Research Institute of M.F. Stelmakh
- Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Institute for Physics of Microstructures, Russian Academy of Sciences
- 期: 卷 52, 编号 11 (2018)
- 页面: 1380-1385
- 栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204252
- DOI: https://doi.org/10.1134/S1063782618110118
- ID: 204252
如何引用文章
详细
The active region of a THz (terahertz) quantum-cascade laser based on three tunnel-coupled GaAs/Al0.15Ga0.85As quantum wells with a resonance-phonon depopulation scheme is designed. Energy levels, matrix elements of dipole transitions, and gain spectra are calculated as functions of the applied electric-field strength F and temperature. It is shown that the maximum gain is implemented at a frequency of 3.37 THz and F = 12.3 kV/cm. Based on the proposed design, a quantum-cascade laser emitting at ~3.3 THz with a double metal waveguide and Tmax ~ 84 K is fabricated. The activation energy Ea = 23 meV for longitudinal-optical (LO) phonon emission upon the stimulated recombination of hot electrons from the upper laser level to the lower one is determined from the Arrhenius temperature dependence of the output power.
作者简介
R. Khabibullin
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: khabibullin@isvch.ru
俄罗斯联邦, Moscow, 117105
N. Shchavruk
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
俄罗斯联邦, Moscow, 117105
D. Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
俄罗斯联邦, Moscow, 117105
D. Ushakov
Belarusian State University
Email: khabibullin@isvch.ru
白俄罗斯, Minsk, 220030
A. Afonenko
Belarusian State University
Email: khabibullin@isvch.ru
白俄罗斯, Minsk, 220030
I. Vasil’evskii
National Research Nuclear University MEPhI
Email: khabibullin@isvch.ru
俄罗斯联邦, Moscow, 115409
A. Zaycev
National Research University of Electronic Technology MIET
Email: khabibullin@isvch.ru
俄罗斯联邦, ZelenogradMoscow, 124498
A. Danilov
AO Polyus Research Institute of M.F. Stelmakh
Email: khabibullin@isvch.ru
俄罗斯联邦, Moscow, 117342
O. Volkov
Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
俄罗斯联邦, Moscow, 125009
V. Pavlovskiy
Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
俄罗斯联邦, Moscow, 125009
K. Maremyanin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: khabibullin@isvch.ru
俄罗斯联邦, Nizhny Novgorod, 603950
V. Gavrilenko
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: khabibullin@isvch.ru
俄罗斯联邦, Nizhny Novgorod, 603950