Мақаланы E-mail арқылы жіберу Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells
- Авторлар: Rumyantsev V.1,2, Kulikov N.1,2, Kadykov A.1, Fadeev M.1, Ikonnikov A.3, Kazakov A.3, Zholudev M.1, Aleshkin V.1,2, Utochkin V.1,2, Mikhailov N.4,5, Dvoretskii S.4, Morozov S.1,2, Gavrilenko V.1,2
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Мекемелер:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Nizhny Novgorod State University
- Moscow State University
- Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 52, № 11 (2018)
- Беттер: 1375-1379
- Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204248
- DOI: https://doi.org/10.1134/S1063782618110234
- ID: 204248
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.
Авторлар туралы
V. Rumyantsev
Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University
Хат алмасуға жауапты Автор.
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Kulikov
Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Kadykov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
M. Fadeev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
A. Ikonnikov
Moscow State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Moscow, 119991
A. Kazakov
Moscow State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Moscow, 119991
M. Zholudev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
V. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Utochkin
Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Mikhailov
Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
S. Dvoretskii
Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Novosibirsk, 630090
S. Morozov
Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Gavrilenko
Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University
Email: rumyantsev@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
