Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation
- 作者: Jahangirli Z.1,2, Hashimzade F.1, Huseynova D.1, Mehdiyev B.1, Mustafaev N.1
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隶属关系:
- Institute of Physics of the National Academy of Sciences of Azerbaijan
- Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan
- 期: 卷 52, 编号 7 (2018)
- 页面: 840-842
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203605
- DOI: https://doi.org/10.1134/S1063782618070060
- ID: 203605
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详细
The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.
作者简介
Z. Jahangirli
Institute of Physics of the National Academy of Sciences of Azerbaijan; Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan
编辑信件的主要联系方式.
Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143; Baku, AZ-1143
F. Hashimzade
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143
D. Huseynova
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143
B. Mehdiyev
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143
N. Mustafaev
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143