Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation


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详细

The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.

作者简介

Z. Jahangirli

Institute of Physics of the National Academy of Sciences of Azerbaijan; Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan

编辑信件的主要联系方式.
Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143; Baku, AZ-1143

F. Hashimzade

Institute of Physics of the National Academy of Sciences of Azerbaijan

Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143

D. Huseynova

Institute of Physics of the National Academy of Sciences of Azerbaijan

Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143

B. Mehdiyev

Institute of Physics of the National Academy of Sciences of Azerbaijan

Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143

N. Mustafaev

Institute of Physics of the National Academy of Sciences of Azerbaijan

Email: zakircahangirli@yahoo.com
阿塞拜疆, Baku, AZ-1143


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