Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation

Z. A. Jahangirli; F. M. Hashimzade; D. A. Huseynova; B. G. Mehdiyev; N. B. Mustafaev

doi:10.1134/S1063782618070060

Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation

Авторы: Jahangirli Z.¹^,2, Hashimzade F.¹, Huseynova D.¹, Mehdiyev B.¹, Mustafaev N.¹
Учреждения:
1. Institute of Physics of the National Academy of Sciences of Azerbaijan
2. Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan
Выпуск: Том 52, № 7 (2018)
Страницы: 840-842
Раздел: Electronic Properties of Semiconductors
URL: https://journals.rcsi.science/1063-7826/article/view/203605
DOI: https://doi.org/10.1134/S1063782618070060
ID: 203605

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Аннотация
Об авторах
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Аннотация

The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.

Об авторах

Z. Jahangirli

Institute of Physics of the National Academy of Sciences of Azerbaijan; Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan

Автор, ответственный за переписку.
Email: zakircahangirli@yahoo.com
Азербайджан, Baku, AZ-1143; Baku, AZ-1143