High-Sensitivity Photodetector Based on Atomically Thin MoS2
- 作者: Lavrov S.1, Shestakova A.1, Mishina E.1, Efimenkov Y.2, Sigov A.1
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隶属关系:
- Moscow Technological University (MIREA)
- NPP Pulsar
- 期: 卷 52, 编号 6 (2018)
- 页面: 771-775
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/203526
- DOI: https://doi.org/10.1134/S106378261806012X
- ID: 203526
如何引用文章
详细
A design for a high-sensitivity photodetector with a single layer of MoS2 transition-metal dichalcogenide used as the basic functional element is proposed and the process of its fabrication is presented step by step. Quality evaluation and the selection of functional MoS2 flakes is based on the results of combined optical characterization. The main operating characteristics of the fabricated device are investigated and a photosensitivity of 1.4 mA/W is demonstrated. A difference of this device in comparison with existing analogues is its high photosensitivity at low operating voltages (in the range of ±3 V).
作者简介
S. Lavrov
Moscow Technological University (MIREA)
编辑信件的主要联系方式.
Email: sdlavrov@mail.ru
俄罗斯联邦, Moscow, 119454
A. Shestakova
Moscow Technological University (MIREA)
Email: sdlavrov@mail.ru
俄罗斯联邦, Moscow, 119454
E. Mishina
Moscow Technological University (MIREA)
Email: sdlavrov@mail.ru
俄罗斯联邦, Moscow, 119454
Yu. Efimenkov
NPP Pulsar
Email: sdlavrov@mail.ru
俄罗斯联邦, Moscow, 105187
A. Sigov
Moscow Technological University (MIREA)
Email: sdlavrov@mail.ru
俄罗斯联邦, Moscow, 119454