Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
- Авторы: Zabavichev I.1, Potekhin A.1, Puzanov A.1, Obolenskiy S.1, Kozlov V.1,2
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Учреждения:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures
- Выпуск: Том 51, № 11 (2017)
- Страницы: 1466-1471
- Раздел: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201641
- DOI: https://doi.org/10.1134/S106378261711029X
- ID: 201641
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Аннотация
Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained.
Об авторах
I. Zabavichev
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950
A. Potekhin
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950
A. Puzanov
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950
S. Obolenskiy
Lobachevsky State University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950