On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors
- Авторы: Aleshkin V.1, Gavrilenko L.1
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Учреждения:
- Institute for Physics of Microstructures
- Выпуск: Том 51, № 11 (2017)
- Страницы: 1444-1448
- Раздел: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201554
- DOI: https://doi.org/10.1134/S1063782617110069
- ID: 201554
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Аннотация
The times of the cascade capture of electrons at a donor–acceptor charged dipole for the case of the pulsed and steady-state excitation of impurity photoconductivity in GaAs, Ge, and Si are calculated. It is shown that the dependence of the frequency of the cascade capture on the concentration of the charged impurity becomes sublinear in semiconductors under consideration at a concentration of the charged impurity higher than 1013 cm–3.
Об авторах
V. Aleshkin
Institute for Physics of Microstructures
Автор, ответственный за переписку.
Email: aleshkin@ipmras.ru
Россия, Nizhny Novgorod, 603950
L. Gavrilenko
Institute for Physics of Microstructures
Email: aleshkin@ipmras.ru
Россия, Nizhny Novgorod, 603950