Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

A. P. Gorshkov; N. S. Volkova; P. G. Voronin; A. V. Zdoroveyshchev; L. A. Istomin; D. A. Pavlov; Yu. V. Usov; S. B. Levichev

doi:10.1134/S1063782617110136

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

作者: Gorshkov A.¹, Volkova N.²^,3, Voronin P.¹, Zdoroveyshchev A.², Istomin L.³, Pavlov D.¹, Usov Y.¹, Levichev S.²
隶属关系:
1. Lobachevsky State University of Nizhny Novgorod
2. Physicotechnical Research Institute
3. Research Institute for Chemistry
期: 卷 51, 编号 11 (2017)
页面: 1395-1398
栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
URL: https://journals.rcsi.science/1063-7826/article/view/201455
DOI: https://doi.org/10.1134/S1063782617110136
ID: 201455

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The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.