Effects of local photoexcitation of high-concentration charge carriers in silicon
- Авторы: Musaev A.1
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Учреждения:
- Institute of Physics, Dagestan Scientific Center
- Выпуск: Том 51, № 10 (2017)
- Страницы: 1290-1294
- Раздел: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/201313
- DOI: https://doi.org/10.1134/S1063782617100153
- ID: 201313
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Аннотация
The phenomena occurring at the local pulsed photoexcitation of intrinsic nonequilibrium highconcentration charge carriers in silicon are experimentally investigated. The effect of a substantial increase in the lifetime of photoexcited charge carriers is found. It is shown that the effect of a substantial increase in the lifetime of charge carriers is caused by a change in the degree of degeneracy and displacement of the impurityrecombination level towards the Fermi level due to local thermoelastic deformation of the crystal and the corresponding distribution of the concentration of nonequilibrium charge carriers.
Об авторах
A. Musaev
Institute of Physics, Dagestan Scientific Center
Автор, ответственный за переписку.
Email: akhmed-musaev@yandex.ru
Россия, Makhachkala, 367003