Laser (λ = 809 nm) power converter based on GaAs
- Авторы: Khvostikov V.1, Sorokina S.1, Potapovich N.1, Khvostikova O.1, Timoshina N.1
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Учреждения:
- Ioffe Physical–Technical Institute
- Выпуск: Том 51, № 5 (2017)
- Страницы: 645-648
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199910
- DOI: https://doi.org/10.1134/S1063782617050128
- ID: 199910
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Аннотация
Laser-power converters with a wavelength of λ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of liquid-phase epitaxy (LPE). Photovoltaic modules with an operating voltage of 4 V for converting radiation of various densities are developed and tested. Two approaches—without the use of optical concentrating systems and with the use of Fresnel lenses are investigated. A monochromatic conversion efficiency exceeding 44% is attained with a photovoltaic module based on 64 laser-radiation converters 0.04 cm2 in area and a concentrating system made of a quartz-lens matrix.
Об авторах
V. Khvostikov
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
S. Sorokina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
N. Potapovich
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
O. Khvostikova
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021
N. Timoshina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Россия, St. Petersburg, 194021