Ab initio calculations of phonon dispersion in CdGa2Se4
- Авторлар: Dzhakhangirli Z.1,2, Kerimova T.1, Abdullayev N.1, Mamedova I.1, Mamedov N.1
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Мекемелер:
- Abdullaev Institute of Physics
- Azerbaijan Technical University
- Шығарылым: Том 51, № 5 (2017)
- Беттер: 556-558
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199818
- DOI: https://doi.org/10.1134/S1063782617050074
- ID: 199818
Дәйексөз келтіру
Аннотация
The density of phonon states and the phonon dispersion in the Brillouin zone are calculated by the density functional method of. The displacements of atoms in the elementary cell are constructed for vibrations of the A, B, and E symmetries. The calculated frequencies of optical phonons are consistent with the experimentally determined frequencies from the IR-absorption (infrared) and Raman-scattering spectra. In the xy plane, the intersection of low-frequency optical phonons with acoustic phonons is observed.
Авторлар туралы
Z. Dzhakhangirli
Abdullaev Institute of Physics; Azerbaijan Technical University
Email: taira-kerimova@mail.ru
Әзірбайжан, Baku, AZ-1143; Baku, AZ-1143
T. Kerimova
Abdullaev Institute of Physics
Хат алмасуға жауапты Автор.
Email: taira-kerimova@mail.ru
Әзірбайжан, Baku, AZ-1143
N. Abdullayev
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
Әзірбайжан, Baku, AZ-1143
I. Mamedova
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
Әзірбайжан, Baku, AZ-1143
N. Mamedov
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
Әзірбайжан, Baku, AZ-1143