Ab initio calculations of phonon dispersion in CdGa2Se4
- 作者: Dzhakhangirli Z.1,2, Kerimova T.1, Abdullayev N.1, Mamedova I.1, Mamedov N.1
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隶属关系:
- Abdullaev Institute of Physics
- Azerbaijan Technical University
- 期: 卷 51, 编号 5 (2017)
- 页面: 556-558
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199818
- DOI: https://doi.org/10.1134/S1063782617050074
- ID: 199818
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详细
The density of phonon states and the phonon dispersion in the Brillouin zone are calculated by the density functional method of. The displacements of atoms in the elementary cell are constructed for vibrations of the A, B, and E symmetries. The calculated frequencies of optical phonons are consistent with the experimentally determined frequencies from the IR-absorption (infrared) and Raman-scattering spectra. In the xy plane, the intersection of low-frequency optical phonons with acoustic phonons is observed.
作者简介
Z. Dzhakhangirli
Abdullaev Institute of Physics; Azerbaijan Technical University
Email: taira-kerimova@mail.ru
阿塞拜疆, Baku, AZ-1143; Baku, AZ-1143
T. Kerimova
Abdullaev Institute of Physics
编辑信件的主要联系方式.
Email: taira-kerimova@mail.ru
阿塞拜疆, Baku, AZ-1143
N. Abdullayev
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
阿塞拜疆, Baku, AZ-1143
I. Mamedova
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
阿塞拜疆, Baku, AZ-1143
N. Mamedov
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
阿塞拜疆, Baku, AZ-1143