Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
- Авторлар: Galiev G.1, Pushkarev S.1, Buriakov A.2, Bilyk V.2, Mishina E.2, Klimov E.1, Vasil’evskii I.3, Maltsev P.1
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Мекемелер:
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- Moscow Technological University “MIREA”
- National Research Nuclear University “MEPhI”
- Шығарылым: Том 51, № 4 (2017)
- Беттер: 503-508
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199762
- DOI: https://doi.org/10.1134/S1063782617040054
- ID: 199762
Дәйексөз келтіру
Аннотация
The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.
Авторлар туралы
G. Galiev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 117105
S. Pushkarev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Хат алмасуға жауапты Автор.
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 117105
A. Buriakov
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 119454
V. Bilyk
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 119454
E. Mishina
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 119454
E. Klimov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 117105
I. Vasil’evskii
National Research Nuclear University “MEPhI”
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 115409
P. Maltsev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
Ресей, Moscow, 117105