Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
- 作者: Galiev G.1, Pushkarev S.1, Buriakov A.2, Bilyk V.2, Mishina E.2, Klimov E.1, Vasil’evskii I.3, Maltsev P.1
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隶属关系:
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- Moscow Technological University “MIREA”
- National Research Nuclear University “MEPhI”
- 期: 卷 51, 编号 4 (2017)
- 页面: 503-508
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199762
- DOI: https://doi.org/10.1134/S1063782617040054
- ID: 199762
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详细
The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.
作者简介
G. Galiev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 117105
S. Pushkarev
Institute of Ultrahigh-Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 117105
A. Buriakov
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 119454
V. Bilyk
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 119454
E. Mishina
Moscow Technological University “MIREA”
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 119454
E. Klimov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 117105
I. Vasil’evskii
National Research Nuclear University “MEPhI”
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 115409
P. Maltsev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow, 117105