Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields
- Авторы: Balagula R.1, Vinnichenko M.1, Makhov I.1, Firsov D.1, Vorobjev L.1
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Учреждения:
- Peter the Great Saint-Petersburg Polytechnic University
- Выпуск: Том 50, № 11 (2016)
- Страницы: 1425-1430
- Раздел: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198240
- DOI: https://doi.org/10.1134/S106378261611004X
- ID: 198240
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Аннотация
The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.
Об авторах
R. Balagula
Peter the Great Saint-Petersburg Polytechnic University
Автор, ответственный за переписку.
Email: rmbal@spbstu.ru
Россия, ul. Politekhnicheskaya 29, St. Petersburg, 195251
M. Vinnichenko
Peter the Great Saint-Petersburg Polytechnic University
Email: rmbal@spbstu.ru
Россия, ul. Politekhnicheskaya 29, St. Petersburg, 195251
I. Makhov
Peter the Great Saint-Petersburg Polytechnic University
Email: rmbal@spbstu.ru
Россия, ul. Politekhnicheskaya 29, St. Petersburg, 195251
D. Firsov
Peter the Great Saint-Petersburg Polytechnic University
Email: rmbal@spbstu.ru
Россия, ul. Politekhnicheskaya 29, St. Petersburg, 195251
L. Vorobjev
Peter the Great Saint-Petersburg Polytechnic University
Email: rmbal@spbstu.ru
Россия, ul. Politekhnicheskaya 29, St. Petersburg, 195251