Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

R. M. Balagula; M. Ya. Vinnichenko; I. S. Makhov; D. A. Firsov; L. E. Vorobjev

doi:10.1134/S106378261611004X

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

作者: Balagula R.M.¹, Vinnichenko M.Y.¹, Makhov I.S.¹, Firsov D.A.¹, Vorobjev L.E.¹
隶属关系:
1. Peter the Great Saint-Petersburg Polytechnic University
期: 卷 50, 编号 11 (2016)
页面: 1425-1430
栏目: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/198240
DOI: https://doi.org/10.1134/S106378261611004X
ID: 198240

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详细

The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.